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We, SINO-MOS, actively pursue our role as a discrete power MOSFET supplier utilizing leading edge technology and manufacturing facilities to produce quality and innovative products that will provide sustainable added values to the customers. SINO-MOS utilizes the leading edge sub-micron MOSFET process with 200mm technology to achieve better performance and provides a more cost effectives solution. The proprietary 500Mcell/in2 technology will shrink the power MOSFET devices for better Rds (on) performance.



1. Discrete Low Voltage MOSFET:

2. Leading edge sub micro trench technology with 500Mcell/in2 technology resulting in lower die size and cost

3. Low RDSon technology to minimise conductive losses

4. Low capacitance to minimise driver losses

5. Optimized gate charge to minimise switching losses

6. Low leakage current

7. High junction/operating temperature

8. Low Ron x Qg, Ron x Qgd and gate charge x RDSon

9. High immunity to dynamic turn-on


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